Product Summary

The SAMSUNG’s S3C44B0X01-ED80 16/32-bit RISC microprocessor is designed to provide a cost-effective and high performance micro-controller solution for hand-held devices and general applications.

Parametrics

Absolute maximum ratings: (1)DC Supply Voltage: 3.6 V; (2)DC Input Voltage: 3.3 V Input buffer to 4.6 V; (3)DC Input Voltage: 3.3 V buffer to 4.6 V; (4)Latch-up Current: ± 200 mA; (5)Storage Temperature: - 40 to 125 ℃.

Features

Features: (1)Little/Big endian(selectable by an external pin); (2)Address space: 32Mbytes per each bank (total 256MB:8 banks); (3)Programmable access size(8/16/32-bit) for all banks; (4)Total 8 memory banks: 6 memory banks for ROM, SRAM etc, 2 memory banks for ROM, SRAM, FP/EDO/SDRAM etc; (5)7 fixed memory bank start address and programmble bank size; (6)1 flexible memory bank start address and programmable bank size; (7)Programmable access cycles for all memory banks; (8)External wait to extend the bus cycles; (9)Supports self-refresh mode in DRAM/SDRAM for power-down; (10)Supports asymmetrically or symmetrically addressable DRAM.

Diagrams

S3C44B0X
S3C44B0X

Other


Data Sheet

Negotiable 
S3C4510B
S3C4510B

Other


Data Sheet

Negotiable 
S3C4530A
S3C4530A

Other


Data Sheet

Negotiable 
S3C49F9X
S3C49F9X

Other


Data Sheet

Negotiable